Part Number: DD127D
Function: 400V, 2.6A N-Channel MOSFET
Package: TO-126F Pin Type
Manufacturer: Huajing Microelectronics ( http://www. crhj.com.cn )
Images:
Description
DD127D, 3DD127D is a silicon NPN power switching transistor, which uses a planar process, a partial pressure ring terminal structure and a few child life control technology, integrated active anti-saturation network, improve the product breakdown voltage, switching speed and reliability.
Features
1. Low switching losses
2. Reverse leakage current is small
3. High temperature characteristics
4. Suitable switching speed
5. High reliability
Applications
1. Compact electronic energy saving lamp
2. Electronic ballast
3. General power switch circuit
Pinout:
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 700 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 9 V
4. Collector Current: Ic = 2.5 A
5. Total Dissipation : Ptot = 1.25 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Other data sheets are available within the file: 3DD127D
DD127D Datasheet PDF
