Part Number: NAND01GW3B
Function: 1 Gbit, 1.8V/3V, NAND Flash Memory
Package: TSOP48, VFBGA63 type
Manufacturer: STMicroelectronics ( st.com )
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Description
The NAND01GW3B is 1 Gbit, NAND Flash Memory.
The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The devices range from 1 Gbit to 8 Gbits and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 2112 Bytes (2048 + 64 spare) or 1056 Words (1024 + 32 spare) depending on whether the device has a x8 or x16 bus width.
What is NAND Flash Memory?
NAND flash memory is named after the Boolean logic function “NOT-AND” (NAND), which describes its internal circuit design.
NAND flash memory is organized as a series of memory cells, each of which is composed of a floating-gate transistor and a control gate transistor. The state of each memory cell is determined by the amount of electrical charge stored on the floating gate.
One of the key advantages of NAND flash memory is its high storage density, which allows for large amounts of data to be stored in a small physical space. It also has a fast read speed and low power consumption, making it well-suited for use in portable devices.
Product List:
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.
Pinout
Features
1. HIGH DENSITY NAND FLASH MEMORIES
(1) Up to 8 Gbit memory array
(2) Up to 64Mbit spare area
(3) Cost effective solutions for mass storage applications
2. NAND INTERFACE
(1) x8 or x16 bus width
(2) Multiplexed Address/ Data
(3) Pinout compatibility for all densities
Other data sheets are available within the file: NAND01GR3B, NAND01GR4B, NAND01GW4B
NAND01GW3B Datasheet PDF Download
