Part Number: SGF5N150UF
Function: 1500V, IGBT
Package: TO-3PF Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications.
Features
1. High Speed Switching
2. Low Saturation Voltage : V ce(sat)= 4.7 V @ Ic = 5A
3. High Input Impedance
Absolute Maximum Ratings (Ta = 25°C) :
1. Collector-Emitter Voltage : Vces = 1500 V
2. Gate-Emitter Voltage : Vges = ± 20 V
3. Collector Current: Ic = 10 A
4. Maximum Power Dissipation: Pd = 62.5 W
5. Operating temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Application:
1. Switching Power Supply – High Input Voltage Off-line Converter
SGF5N150UF Datasheet PDF Download
Other data sheets are available within the file: 5N150UF, SGF5N150